BM3407

P-Channel30V(D-S)4AP-MOSFET

CEM3407L

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-5.1A,RDS(ON)=48mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. RDS(ON)=115mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CEM3407L

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-5.1A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=65mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=115mW@VGS=-2.5V.

CJ3407

P-ChannelEnhancementModeFieldEffectTransistor

CJ3407

SOT-23Plastic-EncapsulateMOSFETS

CJK3407

P-Channel30-V(D-S)MOSFET

CJK3407

P-ChannelEnhancementModeFieldEffectTransistor

CJL3407

P-ChannelEnhancementModeFieldEffectTransistor

CJL3407

P-ChannelEnhancementModeFieldEffectTransistor

CPH3407

Ultrahigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •2.5Vdrive.