MOS（场效应管）

UMW

友台半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 3.6 A (VGS = 10V) ● RDS(ON)

文件：2.4594 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3406 is Pb-free (meets ROHS & Sony 259 specifications). AO3406L is a Green Product ord

文件：110.79 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

文件：424.36 Kbytes 页数：4 Pages

AOSMD

万国半导体