P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3405 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3405 is Pb-free (meets ROHS & Sony 259 specifications). AO3405L is a Green Product order

文件：114.08 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO3405 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3405 is Pb-free (meets ROHS & Sony 259 specifications). AO3405L is a Green Product ordering op VDS(V) = -30V\nID= -2.6 A (VGS= -10V)\nRDS(ON) < 130mΩ (VGS= -10V)\nRDS(ON)< 180mΩ (VGS= -4.5V);

AOS

美国万代

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3405 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3405 is Pb-free (meets ROHS & Sony 259 specifications). AO3405L is a Green Product order

文件：114.08 Kbytes 页数：4 Pages

AOSMD

万国半导体

沟槽型功率MOS

TWGMC

台湾迪嘉