AN7312

DUAL RECORDING /PLAYBACK PRE AMPLIFIER CIRCUIT WITH ALC

AP7312

DUAL150mALOWQUIESCENTCURRENTFASTTRANSIENTLOWDROPOUT

Description TheAP7312is150mA,dualfixedoutputvoltage,lowdropoutlinearregulator.TheAP7312includethepasselement,erroramplifier,band-gap,currentlimitandthermalshutdowncircuitrywhichprotecttheICfromdamageinfaultconditions.TheAP7312hastwoenablepins(EN1andEN2)

APE7312

verylowcostvoiceandmelodysynthesizerwith4-bitsCPU

GeneralDescription TheAPExx12seriesareverylowcostvoiceandmelodysynthesizerwith4-bitsCPU.Theyhavevariousfeaturesincluding4-bitsALU,ROM,RAM,I/Oports,timers,clockgenerator,voiceandmelodysynthesizer,andPWM(Directdrive)orD/Acurrentoutputs,etc.Theaudiosynthes

APM7312

DualN-ChannelEnhancementModeMOSFET

Features •20V/6A,RDS(ON)=35mΩ(typ.)@VGS=10V RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8Package

APM7312K

DualP-ChannelEnhancementModeMOSFET

•20V/6A,RDS(ON)=35mΩ(typ.)@VGS=10V RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant)

APM7312KC-TR

DualN-ChannelEnhancementModeMOSFET

Features •20V/6A,RDS(ON)=35mΩ(typ.)@VGS=10V RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8Package

APM7312KC-TR

DualP-ChannelEnhancementModeMOSFET

•20V/6A,RDS(ON)=35mΩ(typ.)@VGS=10V RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant)

APM7312KC-TRL

DualP-ChannelEnhancementModeMOSFET

•20V/6A,RDS(ON)=35mΩ(typ.)@VGS=10V RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant)

APM7312KC-TU

DualP-ChannelEnhancementModeMOSFET

•20V/6A,RDS(ON)=35mΩ(typ.)@VGS=10V RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant)

APM7312KC-TUL

DualP-ChannelEnhancementModeMOSFET

•20V/6A,RDS(ON)=35mΩ(typ.)@VGS=10V RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=110mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant)