AN4427

Gasket design for optimal acoustic performance

AO4427

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4427usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatechargewitha25Vgaterating.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThedeviceisESDprotected.StandardProductAO4427isPb-free(meetsROHS&

AO4427

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •LoadSwitches -NotebookPCs -DesktopPCs

AO4427

30VP-ChannelMOSFET

AO4427

30VP-ChannelMOSFET

GeneralDescription TheAO4427usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatechargewitha25Vgaterating.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThedeviceisESDprotected. ProductSummary VDS(V)=-30V I

AO4427

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-12.5A(VGS=-20V) ●RDS(ON)

AO4427-HF

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-12.5A(VGS=-20V) ●RDS(ON)

AO4427L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4427usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatechargewitha25Vgaterating.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThedeviceisESDprotected.StandardProductAO4427isPb-free(meetsROHS&

AP4427GM

SimpleDriveRequirement,FastSwitchingCharacteristic

BVDSS35V RDS(ON)6.6mΩ ID16A Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSO-8packageiswidelypreferredforallcommercial-industrialsurface

APM4427K

P-ChannelEnhancementModeMOSFET

Features •-30V/-4A, RDS(ON)=85mΩ(typ.)@VGS=-10V RDS(ON)=140mΩ(typ.)@VGS=-4.5V •SuperHighDensityCellDesign •ReliableandRugged •SOP-8Package •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBat