Design Guidelines for Quasi-Resonant Converters

文件：376.03 Kbytes 页数：24 Pages

FAIRCHILD

仙童半导体

STSmartVoice demonstration board STEVAL-MKI126Vx

文件：3.51692 Mbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 55A@ TC=25℃ • Drain Source Voltage- : VDSS=30V(Min) • Static Drain-Source On-Resistance : RDS(on) =5.6mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：310.35 Kbytes 页数：2 Pages

ISC

无锡固电

30V N-Channel MOSFET

General Description The AOD4146/AOI4146 is fabricated with SDMOSTM trench technology that combines excellent R DS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general pur

文件：363.94 Kbytes 页数：7 Pages

AOSMD

万国半导体

N-Channel 30-V (D-S) MOSFET

文件：994.13 Kbytes 页数：7 Pages

VBSEMI

微碧半导体