This document provides an introduction to the Tasking toolchain

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STMICROELECTRONICS

意法半导体

This document provides an introduction to the Tasking toolchain

ST

意法半导体

40V N-Channel MOSFET

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AOSMD

万国半导体

40V N-Channel MOSFET

文件：423.16 Kbytes 页数：7 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电