BD136

PlasticMediumPowerSiliconPNPTransistor

1.5AMPEREPOWERTRANSISTORSPNPSILICON45,60,80VOLTS10WATTS ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc •BD136,138,140arecomplementarywithBD135,137,139

BD136

PNPSILICONTRANSISTORS

BD136

PNPSILICONTRANSISTOR

DESCRIPTION TheUTCBD136/BD138/BD140aresiliconepitaxialplanerPNPtransistor,designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. ThecomplementaryNPNtypesaretheBD135/BD137/BD139.

BD136

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

BD136

PNPPLASTICPOWERTRANSISTORS

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:-1.5A OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

BD136

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-126package ·Highcurrent ·ComplementtotypeBD135/137/139 APPLICATIONS ·Driverstagesinhigh-fidelityamplifiersandtelevisioncircuits

BD136

PlasticMediumPowerSiliconPNPTransistor

PlasticMediumPowerSiliconPNPTransistor Thisseriesofplastic,medium−powersiliconPNPtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable* •DCCurrentGain−hFE=40(Min)@

BD136

EPITAXIALPLANARPNPTRANSISTOR

GENERALPURPOSEAPPLICATION. FEATURES •HighCurrent.(Max.:-1.5A) •LowVoltage(Max.:-45V) •DCCurrentGain:hFE=40Min.@IC=-0.15A •ComplementarytoBD135.

BD136

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD135/137/139 APPLICATIONS •Driverstagesinhigh-fidelityamplifiersandtelevisioncircuits

BD136

Complementarylowvoltagetransistor