包装：散装 类别：盒子，外壳，机架 箱 描述：BOX ALUM NAT 2.520\

BUD

包装：散装 类别：盒子，外壳，机架 箱 描述：BOX ALUM NAT 2.520\

BUD

包装：散装 类别：盒子，外壳，机架 箱 描述：BOX ALUM BLACK 2.520\

BUD

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AON2801/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AON2801 and AON2801L are electrically identical. -RoHS Compli

文件：176.93 Kbytes 页数：5 Pages

AOSMD

万国半导体

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Application | « Reverse Battery protection « Load switch « Power management « Motor Control | « Portable Power Adaptors

文件：2.37598 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

P-Channel Enhancement Mode MOSFET with Schottky Diode

Features MOSFET ● -20V/-1.5A , RDS(ON)=145mW(typ.) @ VGS=-4.5V RDS(ON)=180mW(typ.) @ VGS=-2.5V ● Super High Dense Cell Design ● Reliable and Rugged ● Lead Free Available (RoHS Compliant) SBD ● Low Forward Voltage Applications ● Power Management in Notebook Computer, Portable E

文件：607.21 Kbytes 页数：11 Pages

ANPEC

茂达电子