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Introduction The basic principle of the field-effect transistor (FET) has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accompl

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和泉电气

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文件：3.64512 Mbytes 页数：41 Pages

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和泉电气