High Accuracy Analog Magnetic Scale Sensor

Description The AMR40X0 series magnetic grate sensors integrate two push-pull Wheatstone bridges, each of which contains four high-sensitivity anisotropic magnetoresistance (AMR) sensing elements. Such a design effectively compensates temperature drift to ensure high accuracy under wide temp

文件：1.0049 Mbytes 页数：9 Pages

MULTIDIMENSION

多维科技

磁栅传感器

AMR4020内部包含两个推挽式惠斯通电桥，每个惠斯通电桥包含四个高灵敏度AMR传感元件。当AMR4020沿着磁栅长度方向移动时，其输出正余弦信号，由此可计算出位移量的大小。此外，独特的AMR惠斯通电桥结构有效地补偿了传感器的温度漂移。AMR4020采用小型的LGA封装，装配方便。 (1)各向异性磁电阻(AMR)技术\n(2)宽工作电压范围\n(3)允许较大的测量间隙\n(4)匹配磁栅宽度2mm\n(5)适用于小齿距的齿轮探测\n(6)正弦/余弦输出\n(7)优越的的温度稳定性;

MDT

多维

High Accuracy Analog Magnetic Scale Sensor

Description The AMR40X0 series magnetic grate sensors integrate two push-pull Wheatstone bridges, each of which contains four high-sensitivity anisotropic magnetoresistance (AMR) sensing elements. Such a design effectively compensates temperature drift to ensure high accuracy under wide temp

文件：1.0049 Mbytes 页数：9 Pages

MULTIDIMENSION

多维科技

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

文件：50.97 Kbytes 页数：4 Pages

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 22.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：309.13 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

文件：50.97 Kbytes 页数：4 Pages

ADPOW