6-18 GHz 1W Power Amplifier

文件：88.23 Kbytes 页数：4 Pages

HP

安捷伦

6-18 GHz 1W Power Amplifier

Agilent

安捷伦

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = 60V ID = 4.2A (VGS = 10V) RDS(ON)

文件：131.14 Kbytes 页数：4 Pages

AOSMD

万国半导体

60V N-Channel MOSFET

文件：201.03 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID =4.2 A (VGS = 10V) ● RDS(ON)

文件：1.1081 Mbytes 页数：4 Pages

KEXIN

科信电子