丝印：AMC1100；Package：SOIC(DWV)；AMC1100 Fully-Differential Isolation Amplifier

1 Features 1• ±250-mV input voltage range optimized for shunt resistors • Very low nonlinearity: 0.075% max at 5 V • Low offset error: 1.5 mV max • Low noise: 3.1 mVRMS typ • Low high-side supply current: 8 mA max at 5 V • Input bandwidth: 60 kHz min • Fixed gain: 8 (0.5% Accuracy

文件：1.65689 Mbytes 页数：38 Pages

TI

德州仪器

AMC1100 Fully-Differential Isolation Amplifier

1 Features 1• ±250-mV input voltage range optimized for shunt resistors • Very low nonlinearity: 0.075% max at 5 V • Low offset error: 1.5 mV max • Low noise: 3.1 mVRMS typ • Low high-side supply current: 8 mA max at 5 V • Input bandwidth: 60 kHz min • Fixed gain: 8 (0.5% Accuracy

文件：1.65689 Mbytes 页数：38 Pages

TI

德州仪器

isc N-Channel MOSFET Transistor

文件：297.12 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Channel Rugged Planar MOSFET

General Description The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current sw

文件：297.58 Kbytes 页数：6 Pages

AOSMD

万国半导体