丝印：AM9435；-30V P-Channel Enhancement Mode MOSFET

■ DESCRIPTION The AM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap

文件：731.63 Kbytes 页数：6 Pages

AXELITE

亚瑟莱特

丝印：AM9435；-30V P-Channel Enhancement Mode MOSFET

■ DESCRIPTION The AM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap

文件：731.63 Kbytes 页数：6 Pages

AXELITE

亚瑟莱特

-30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM9435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck c

文件：492.19 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

-30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM9435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck c

文件：492.19 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

-30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM9435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck c

文件：492.19 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

-30V P-Channel Enhancement Mode MOSFET

■ DESCRIPTION The AM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap

文件：731.63 Kbytes 页数：6 Pages

AXELITE

亚瑟莱特

-30V P-Channel Enhancement Mode MOSFET

■ DESCRIPTION The AM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap

文件：731.63 Kbytes 页数：6 Pages

AXELITE

亚瑟莱特

P-Channel 30-V (D-S) MOSFET

文件：959.27 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

文件：959.28 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

文件：116.33 Kbytes 页数：5 Pages

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