丝印：AM8；Package：SMB；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMB Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W • Reverse standoff

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS

DESCRIPTION The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range. AM80610-030 utilizes a rugged, overlay, emitter ballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for dri

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STMICROELECTRONICS

意法半导体

One Channel H-Bridge Power Driver

● Features and Benefits  Wide supply voltage range (2.0V~6.8V)  Maximum output continuous current 0.9A  Low standby mode current (Typ=0.01μA)  Low quiescent operation current  Low MOSFETs On-resistance 0.6Ω@Io=0.2A ; 0.65Ω@Io=0.6A  Provide four operation modes: forward/reverse/stop/bra

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AMTEK

晶致半导体

One Channel H-Bridge Power Driver

● Features and Benefits  Wide supply voltage range (2.0V~6.8V)  Maximum output continuous current 0.9A  Low standby mode current (Typ=0.01μA)  Low quiescent operation current  Low MOSFETs On-resistance 0.6Ω@Io=0.2A ; 0.65Ω@Io=0.6A  Provide four operation modes: forward/reverse/stop/bra

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AMTEK

晶致半导体

8-Bit Microprocessor

8-Bit Microprocessor

文件：660.52 Kbytes 页数：12 Pages

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L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF

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STMICROELECTRONICS

意法半导体

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION AM80814-025 is a high power silicon Class C transistor designed for ultra-broadband L-Band radar applications. This device is capable of operation over a broad range of pulse widths and duty cycles. Low RF thermal resistance and computerized automatic wire bonding techniques ensure h

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STMICROELECTRONICS

意法半导体

AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM80912-005 is designed for specialized avionics applications, including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW

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STMICROELECTRONICS

意法半导体

AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION The AM80912-015 is designed for specialized avionics applications, including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ ∞:1 VSWR CAPABILITY ■ LOW

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STMICROELECTRONICS

意法半导体

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM80912-015 is designed for avionics applications, including JTIDS. It is housed in a Hermetic Package. FEATURES: • Internal Input/Output Matching Network • PG = 8.1 dB at 15 W/ 1215 MHz • Omnigold™ Metalization System • 28 V Operations • Common Base configuration

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ASI