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AM7407

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM7407 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanc

文件:912.45 Kbytes 页数:8 Pages

AITSEMI

创瑞科技

AM7407

MOS管开关

AiT-Semi

创瑞科技

AM7407J8R

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM7407 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanc

文件:912.45 Kbytes 页数:8 Pages

AITSEMI

创瑞科技

AM7407J8VR

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM7407 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanc

文件:912.45 Kbytes 页数:8 Pages

AITSEMI

创瑞科技

技术参数

  • 入侵检测系统(一) (25°C):

    -20

  • 稳态分布容积 (V):

    ±12

  • VGS (V):

    -14

  • 阈值电压(V) 最小值/最大值:

    -0.4/-1.0

  • RDS(ON) Vgs=±10V(mΩ) 型:

    6.5

  • Vgs=±4.5V(mΩ) 型:

    7.8

  • Vgs=±2.5V(mΩ) 型:

    10

  • Vgs=±1.8V(mΩ) 型:

    13

  • 应用:

    PWM/Handheld

  • 交叉参考:

    AON7407

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更多AM7407供应商 更新时间2026-1-21 15:09:00