P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. The AM4953 is available in SOP8 package. FEATURES  VDS = -30V,ID = -

文件：801.2 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. The AM4953 is available in SOP8 package. FEATURES  VDS = -30V,ID = -

文件：801.2 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

Dual P-Channel 30-V (D-S) MOSFET

文件：1.05547 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

BCD
HTSSOP

BCD

上传：深圳市融意电子有限公司

BCD
SSOP-16

BCD

上传：深圳市恒达亿科技有限公司