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型号	下载订购	功能描述	制造商上传企业	LOGO
AM4812	文件：472.64 Kbytes Page：8 Pages	30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM4812 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. The AM4812 is particul 文件：472.64 Kbytes 页数：8 Pages	AITSEMI 创瑞科技	AITSEMI
AM4812	文件：300 bytes Page：1 Pages	SOP8 MOSFET	AiT-Semi 创瑞科技	AiT-Semi
AM4812M8R	文件：472.64 Kbytes Page：8 Pages	30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM4812 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. The AM4812 is particul 文件：472.64 Kbytes 页数：8 Pages	AITSEMI 创瑞科技	AITSEMI
AM4812M8VR	文件：472.64 Kbytes Page：8 Pages	30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM4812 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. The AM4812 is particul 文件：472.64 Kbytes 页数：8 Pages	AITSEMI 创瑞科技	AITSEMI

更多AM4812供应商更新时间2025-12-14 9:01:00