AM3460

60V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM3460isavailableinSOT-23Spackage. FEATURES BV≥60VID=3A RDS(ON)≤90mΩ@VGS=10V RDS(ON)≤110mΩ@VGS=5V Advancedtrenchcelldesign Highspeedswitch AvailableinSOT-23SPackage APPLICATION Portableappliances Notebook/PCappliances PowerManage

AM3460E3SR

60V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM3460isavailableinSOT-23Spackage. FEATURES BV≥60VID=3A RDS(ON)≤90mΩ@VGS=10V RDS(ON)≤110mΩ@VGS=5V Advancedtrenchcelldesign Highspeedswitch AvailableinSOT-23SPackage APPLICATION Portableappliances Notebook/PCappliances PowerManage

AM3460E3SVR

60V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION TheAM3460isavailableinSOT-23Spackage. FEATURES BV≥60VID=3A RDS(ON)≤90mΩ@VGS=10V RDS(ON)≤110mΩ@VGS=5V Advancedtrenchcelldesign Highspeedswitch AvailableinSOT-23SPackage APPLICATION Portableappliances Notebook/PCappliances PowerManage

AM3460N

N-Channel 60V (D-S) MOSFET

AO3460

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3460/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas4.5V,inthesmallSOT-23footprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlo

AO3460

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

AO3460

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.65A(VGS=10V) ●RDS(ON)

AO3460-HF

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.65A(VGS=10V) ●RDS(ON)

BD3460FS

General-Purpose6chElectronicVolumewithBuilt-inAdvancedSwitch

BD3460FS

General-PurposeElectronicVolumewithBuilt-inAdvancedSwitch