MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3412 is available in SOT-23S Package Type FEATURES  50V/0.1A, RDS(ON)=3.5Ω(MAX) @VGS=5V ID = 0.1A RDS(ON) = 10Ω(MAX) @VGS= 2.75V. ID = 0.1A  Super High dense cell design for extremely low RDS(ON).  Reliable and Rugged.  Low Threshold Voltage (0.5V- 1.5V) Make it Ide

文件：431.95 Kbytes 页数：7 Pages

AITSEMI

创瑞科技

MOSFET N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3412 is available in SOT-23S Package Type FEATURES  50V/0.1A, RDS(ON)=3.5Ω(MAX) @VGS=5V ID = 0.1A RDS(ON) = 10Ω(MAX) @VGS= 2.75V. ID = 0.1A  Super High dense cell design for extremely low RDS(ON).  Reliable and Rugged.  Low Threshold Voltage (0.5V- 1.5V) Make it Ide

文件：431.95 Kbytes 页数：7 Pages

AITSEMI

创瑞科技

TI
BGA

TI

德州仪器

上传：深圳市恒佳微电子有限公司

晶致
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上传：深圳市钧敏科技有限公司

AIMTEC
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上传：深圳市和悦电子贸易有限公司