丝印：AM3401；P-Ch 30V Fast Switching MOSFETs

 GENERAL DESCRIPTION The AM3401 is the highest performance trench P ch MOSFETs with extreme high cell density which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The AM3401 meet the RoHS and Green Product requirement , with full func

文件：643.13 Kbytes 页数：7 Pages

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亚瑟莱特

丝印：AM3401；P-Ch 30V Fast Switching MOSFETs

 GENERAL DESCRIPTION The AM3401 is the highest performance trench P ch MOSFETs with extreme high cell density which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The AM3401 meet the RoHS and Green Product requirement , with full func

文件：643.13 Kbytes 页数：7 Pages

AXELITE

亚瑟莱特

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The AM3401 is available in SOT-23 package. FEATURES  VDS= -30V, ID=-

文件：791.11 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS= -30V VGS= ±12V ID(A)= -4.2A RDS(ON) = 55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. The AM3401B is available in SOT-23 package. FEATURES ⚫ Super High dense cell design for extremely low R DS(ON) ⚫ Reliable and Rugged ⚫ Ava

文件：533.08 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS= -30V VGS= ±12V ID(A)= -4.2A RDS(ON) = 55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. The AM3401B is available in SOT-23 package. FEATURES ⚫ Super High dense cell design for extremely low R DS(ON) ⚫ Reliable and Rugged ⚫ Ava

文件：533.08 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS= -30V VGS= ±12V ID(A)= -4.2A RDS(ON) = 55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. The AM3401B is available in SOT-23 package. FEATURES ⚫ Super High dense cell design for extremely low R DS(ON) ⚫ Reliable and Rugged ⚫ Ava

文件：533.08 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The AM3401 is available in SOT-23 package. FEATURES  VDS= -30V, ID=-

文件：791.11 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The AM3401 is available in SOT-23 package. FEATURES  VDS= -30V, ID=-

文件：791.11 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

P-Ch 30V Fast Switching MOSFETs

 GENERAL DESCRIPTION The AM3401 is the highest performance trench P ch MOSFETs with extreme high cell density which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The AM3401 meet the RoHS and Green Product requirement , with full func

文件：643.13 Kbytes 页数：7 Pages

AXELITE

亚瑟莱特

P-Ch 30V Fast Switching MOSFETs

 GENERAL DESCRIPTION The AM3401 is the highest performance trench P ch MOSFETs with extreme high cell density which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The AM3401 meet the RoHS and Green Product requirement , with full func

文件：643.13 Kbytes 页数：7 Pages

AXELITE

亚瑟莱特