MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS= -30V VGS= ±12V ID(A)= -4.2A RDS(ON) = 55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. The AM3401B is available in SOT-23 package. FEATURES ⚫ Super High dense cell design for extremely low R DS(ON) ⚫ Reliable and Rugged ⚫ Ava

文件：533.08 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

MOSFET -30V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION VDS= -30V VGS= ±12V ID(A)= -4.2A RDS(ON) = 55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. The AM3401B is available in SOT-23 package. FEATURES ⚫ Super High dense cell design for extremely low R DS(ON) ⚫ Reliable and Rugged ⚫ Ava

文件：533.08 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

TI
BGA

TI

德州仪器

上传：深圳市恒佳微电子有限公司

晶致
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AIMTEC
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上传：深圳市和悦电子贸易有限公司