4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

GENERAL DESCRIPTION The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered in a 32-pin package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or era

文件：446.08 Kbytes 页数：33 Pages

AMD

超威半导体

4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

GENERAL DESCRIPTION The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered in a 32-pin package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or era

文件：446.08 Kbytes 页数：33 Pages

AMD

超威半导体

5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC

5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC

5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC