2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F020 is a 2 Megabit Flash memory organized as 256 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F020 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to

文件：509.2 Kbytes 页数：35 Pages

AMD

超威半导体

2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F020 is a 2 Megabit Flash memory organized as 256 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F020 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to

文件：509.2 Kbytes 页数：35 Pages

AMD

超威半导体

2 Megabit CMOS Flash Memory

DESCRIPTION The CAT28F020 is a high speed 256K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second. FEATURES ■ Fast Re

文件：100.28 Kbytes 页数：14 Pages

Catalyst

Catalyst Semiconductor

28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

文件：878.8 Kbytes 页数：38 Pages

Intel

英特尔

262,144 x 8 CMOS FLASH MEMORY

262,144 x 8 CMOS FLASH MEMORY

文件：695.25 Kbytes 页数：18 Pages

ISSI

矽成半导体