AM1010

1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE

VOLTAGE-50to1000VoltsCURRENT-1.0~1.5Amperes FEATURES ●Ratingsto1000VPRV ●Surgeoverloadrating—30/50amperespeak ●Idealforprintedcircuitboard ●Reliableconstructionutilizingmoldedplastic ●Mountingposition:Any

AM1010

Silicon Miniature Single-Phase Bridge

Voltage:50-1000Volts Current:1.0-1.5Amp Features Ratingsto1000VPRV Surgeoverloadrating-30/50amperespeak Idealforprintedcircuitboard Reliableconstructionutilizingmoldedplastic Mountingposition:Any

AM1010-G

Silicon Miniature Single-Phase Bridge

Features: •Ratingsto1000VPRV •Surgeoverloadrating-30/50amperespeak •Idealforprintedcircuitedboard •Reliableconstructionutilizingmoldedplastic •Mountingposition:Any

AM1011-070

RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS

DESCRIPTION TheAM1011-070deviceisahighpowerClassCtransistorspecificallydesignedforL-BandAvionicstransponder/interrogatorpulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYG

AM1011-075

L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION TheAM1011-075deviceisahighpowerClassCtransistorspecificallydesignedforL-BandAvionicstransponder/interrogatorpulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■10:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTP

AM1011-075

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIAM1011-075isahighpowerClassCtransistordesignedforL-BandAvionicspulseoutputanddriverapplications. FEATURES: •InternalInput/OutputMatchingNetworks •PG=9.2dBmin.at75W/1090MHz •Omnigold™MetalizationSystem

AM1011-300

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION TheAM1011-300isarugged,ClassCcommonbasedevicespecificallydesignedfornewModeSinterrogatorandtransponderapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTING ■LOWRFTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGEOMETRY ■METAL/CERAMIC

AM1011-400

L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION TheAM1011-400deviceisahighpowerClassCtransistorspecificallydesignedforTCASandMode-Spulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■15:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGE

AM1011-500

NPN RF POWER TRANSISTOR

DESCRIPTION: TheASIAM1011-500isaCommonBaseDeviceDesignedforPulsedL-BandRadarAmplifierApplications. FEATURESINCLUDE: •Input/OutputMatching •GoldMetallization •HermeticMetal/CeramicPackage

AM1011-500

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION TheAM1011-500deviceisahighpowerClassCtransistorspecificallydesignedforL-BandAvionicapplicationsinvolvinghighpulseburstdutycycles. ■POUT=500WMIN.WITH8.5dBMIN.GAIN ■10:1LOADVSWRCAPABILITY@10µS.,1DUTY ■SIXPAC™HERMETICMETAL/CERAMICPACKAGE ■E