丝印：ALV；Package：SMB；Surface Mount Transient Voltage Suppressors

文件：975.32 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：ALV；Package：SMB；Surface Mount Transient Voltage Suppressors

文件：251.73 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：ALV；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：251.73 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：ALVC00；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件：595.48 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ALVC00；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件：595.48 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ALVC00；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件：595.48 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ALVC00；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件：595.48 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ALVC00；Package：SOIC；QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件：595.48 Kbytes 页数：18 Pages

TI

德州仪器

丝印：ALVC00I；Package：TSSOP；QUADRUPLE 2-INPUT POSITIVE-NAND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 3 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 des

文件：333.55 Kbytes 页数：12 Pages

TI

德州仪器

丝印：ALVC00I；Package：TSSOP；QUADRUPLE 2-INPUT POSITIVE-NAND GATE

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Operates From 1.65 V to 3.6 V Max tpd of 3 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per JESD 17 des

文件：333.55 Kbytes 页数：12 Pages

TI

德州仪器