Limit Alarms (rotary switch adj.) AL-UNIT

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MSYSTEM

爱模

All members of the ST62 Series of Microcontrollers

文件：393.95 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB432 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOB432 is Pb-free (meets ROHS & Sony 259 specifications). AOB4

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AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 34mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电