AOB414

N-ChannelEnhancementModeFieldEffectTransistor

AOB414

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOB414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.AOB414L(GreenProduct)isofferedinalead-freepackage.

AOB414

iscN-ChannelMOSFETTransistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=51A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=25mΩ(Max) •100avalanchetested •Minimum

AOB414L

N-ChannelEnhancementModeFieldEffectTransistor

AOD414

N-ChannelEnhancementModeFieldEffectTransistor

AOD414

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.AOD414L(GreenProduct)isofferedinalead-freepackage.

AOD414

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

AOD414

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

AOD414

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=85A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·MotorDrive ·DC-DCConverter ·HighFrequencySwitchingandSynchronousRectification

AOD414L

N-ChannelEnhancementModeFieldEffectTransistor