ALTG-413-VSLASHQ

Limit Alarms (rotary switch adj.) AL-UNIT

AN_W413

WIFIAntenna

AN413

InitializationoftheST9

AOD413

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications.StandardProductAOD413isPb-free(meets

AOD413

P-ChannelMOSFET

■Features ●VDS(V)=-40V ●ID=-12A(VGS=-10V) ●RDS(ON)

AOD413

iscP-ChannelMOSFETTransistor

AOD413A

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD413AusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications. Features VDS(V)=-40V ID=-12A(VGS

AOD413A

40VP-ChannelMOSFET

AOD413A

iscP-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=-12A@TC=25℃ •DrainSourceVoltage- :VDSS=-40V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max) •100avalanchetested •MinimumLot-to-Lo

AOD413A

P-ChannelEnhancementModeMOSFETl

Features Vos=-40VID=-30A ROS(ON)