首页 >ALD210808PCL>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ALD210808PCL | PRECISION N-CHANNEL EPAD짰 MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR FEATURES & BENEFITS • Precision VGS(th) = +0.80V +0.010V • VOS (VGS(th) match) to 2mV/10mV max. • Sub-threshold voltage (nano-power) operation • 100,000,000:1 operating current ranges • High tran 文件：519.59 Kbytes 页数：12 Pages | ALD | ALD | |
ALD210808PCL | PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR 文件：113.66 Kbytes 页数：12 Pages | ALD | ALD | |
ALD210808PCL | Mosfet Arrays | ALD | ALD | |
PRECISION N-CHANNEL EPAD짰 MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR FEATURES & BENEFITS • Precision VGS(th) = +0.80V +0.010V • VOS (VGS(th) match) to 2mV/10mV max. • Sub-threshold voltage (nano-power) operation • 100,000,000:1 operating current ranges • High tran 文件：519.59 Kbytes 页数：12 Pages | ALD | ALD | ||
PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR 文件：113.66 Kbytes 页数：12 Pages | ALD | ALD |
技术参数
- Mode：
Precision Enhancement Mode
- Dual Quad：
Quad
- Package Type：
PDIP16
- Threshold Voltage (typ) (V)：
0.8
- Threshold Voltage Tolerance (+/-) (V)：
0.02
- Offset Voltage (Max) (mV)：
10
- Drain On Current (Typ) (mA)：
70
- Gate Input Leakage Current (Max) (pA)：
200
- Drain Source On Resistance (Max) (Ohm)：
25
- Drain Source Leakage Current (Max) (nA)：
0.4
- Drain Source On Resistance Mismatch (typ) (%)：
0.6
- Drain Source Break-down Voltage (Min) (V)：
10
- Other Features：
-----
- Temp Range (degC)：
0 to +70
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADVANCED |
25+ |
DIP-16 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Advanced Linear Devices Inc. |
22+ |
16PDIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
Advanced Linear Devices Inc. |
2022+ |
16-PDIP |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
24+ |
N/A |
73000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
Advanced Linear Devices Inc. |
25+ |
16-DIP(0.300 7.62mm) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 |
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