ALD114913中文资料ALD数据手册PDF规格书

GENERAL DESCRIPTION

ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD CMOS technology. These devices are intended for low voltage, small signal applications. They are excellent functional replacements for normally-closed relay applications, as they are normally on (conducting) without any power applied, but could be turned off or modulated when system power supply is turned on. These MOSFETS have the unique characteristics of, when the gate is grounded, operating in the resistance mode for low drain voltage levels and in the current source mode for higher voltage levels and providing a constant drain current.

FEATURES

• Depletion mode (normally ON)

• Precision Gate Threshold Voltages: -1.30V +/- 0.04V

• Nominal RDS(ON) @ VGS = 0.0V of 1.3KΩ

• Matched MOSFET-to-MOSFET characteristics

• Tight lot-to-lot parametric control

• Low input capacitance

• VGS(th) match (VOS) — 20mV

• High input impedance — 1012Ω typical

• Positive, zero, and negative VGS(th) temperature coefficient

• DC current gain >108

• Low input and output leakage currents

APPLICATIONS

• Functional replacement of Form B (NC) relays

• Ultra low power (nanowatt) analog and digital circuits

• Ultra low operating voltage (<0.2V) analog and digital circuits

• Sub-threshold biased and operated circuits

• Zero power fail safe circuits in alarm systems

• Backup battery circuits

• Power failure and fail safe detector

• Source followers and high impedance buffers

• Precision current mirrors and current sources

• Capacitives probes and sensor interfaces

• Charge detectors and charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors and level shifters

• Sample and Hold

• Current multipliers

• Discrete analog switches and multiplexers

• Discrete voltage comparators