ALD114904中文资料ALD数据手册PDF规格书

GENERAL DESCRIPTION

ALD114804A/ALD114804/ALD114904A/ALD114904 are high precision monolithic quad/dual depletion mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications.

FEATURES

• Depletion mode (normally ON)

• Precision Gate Threshold Voltages: -0.40V +/-0.02V

• Nominal RDS(ON) @ VGS = 0.0V of 5.4KΩ

• Matched MOSFET-to-MOSFET characteristics

• Tight lot-to-lot parametric control

• Low input capacitance

• VGS(th) match (VOS) — 20mV

• High input impedance — 1012Ω typical

• Positive, zero, and negative VGS(th) temperature coefficient

• DC current gain >108

• Low input and output leakage currents

APPLICATIONS

• Functional replacement of Form B (NC) relays

• Ultra low power (nanowatt) analog and digital circuits

• Ultra low operating voltage (<0.2V) analog and digital circuits

• Sub-threshold biased and operated circuits

• Zero power fail safe circuits in alarm systems

• Backup battery circuits

• Power failure and fail safe detector

• Source followers and high impedance buffers

• Precision current mirrors and current sources

• Capacitives probes and sensor interfaces

• Charge detectors and charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors and level shifters

• Sample and Hold

• Current multipliers

• Discrete analog switches and multiplexers

• Discrete voltage comparators