超结MOS

AK

安捷利

Low Vcesat NPN Epitaxial Planar Transistor

Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features • Very low collector-to-emitter saturation voltage • Fast switching speed • High

文件：173.15 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技

COMMAND SERIES

文件：60.83 Kbytes 页数：1 Pages

GENERAL

通用电缆

Nylon Insulated Cord End Terminals

文件：202.04 Kbytes 页数：1 Pages

PROPOWER