AIMZH120R010M1T中文资料汽车级 1200V 碳化硅 (SiC) 沟槽功率 MOSFET，采用 TO247-4L（细引线），8.7mΩ数据手册Infineon规格书

描述 Description

With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

特性 Features

• Very low switching losses
• Increased turn-on voltage VGS(on)= 20 V
• Best in class switching energy
• Lowest device capacitances
• low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on
• Reduced total gate charge QGtot for lower driving power and losses
• .XT die attach technology for best in class thermal performance
• Sense pin for optimized switching performance
• Suitable for HV creepage requirements
• Thinner leads for reduced risk of solder bridges

优势:
• Efficiency improvement
• Enabling higher frequency
• Increased power density
• Cooling effort reduction
• Reduction of system complexity and cost

应用 Application

• On-board charger
• DC/DC converter
• Auxiliary drives