Features and Benefits:

High speed H5 technology offering:

• Best-in-Class efficiency in hard switching and resonant

topologies

• Plug and play replacement of previous generation IGBTs

• 650V breakdown voltage

• Low gate charge QG

• Maximum junction temperature 175°C

• Dynamically stress tested

• Qualified according to AEC-Q101

• Green package (RoHS compliant)

• Complete product spectrum and PSpice Models:

http://www.infineon.com/igbt/

AIGB30N65H5属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。英飞凌科技股份公司制造生产的AIGB30N65H5晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。