丝印：AG15EF5；Package：PG-TO263-3；High speed FAST IGBT in TRENCHSTOPTM 5 technology

Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress tested • Qualified according to AEC-Q101 • Green package (

文件：1.46389 Mbytes 页数：14 Pages

Infineon

英飞凌

采用小型 SMD 封装的世界一流低成本电源，适用于快速开关应用

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/ • TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed\n• 650V break-down voltage, 15A nominal current\n• Very fast switching (up to 150kHz)\n• Automotive qualified in accordance to Infineon quality standards\n• Max junct;

Infineon

英飞凌

650V DuoPack IGBT and Diode High speed switching series fifth generation

文件：2.3586 Mbytes 页数：17 Pages

Infineon

英飞凌

650V DuoPack IGBT and Diode High speed switching series fifth generation

文件：2.5293 Mbytes 页数：17 Pages

Infineon

英飞凌

650V DuoPack IGBT and Diode High speed switching series fifth generation

文件：2.35787 Mbytes 页数：17 Pages

Infineon

英飞凌