AIDK16S65C5中文资料CoolSiC™ 肖特基二极管数据手册Infineon规格书

描述 Description

Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.

特性 Features

• Revolutionary semiconductor material - Silicon Carbide
• Benchmark switching behavior
• No reverse recovery/ No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Junction Temperature range from -40°C to 175°C
• System efficiency improvement over Si diodes
• System cost / size savings due to reduced cooling requirements
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures
• Reduced EMI

优势:
• Traction inverter
• Booster / DCDC Converter
• On board Charger / PFC

应用 Application

• Traction inverter
• Booster / DCDC Converter
• On board Charger / PFC