丝印：AH；Package：SC-74A；Single 2-Input AND Gate

The NL17SZ08 is a single 2−input AND Gate in tiny footprint packages. Features • Designed for 1.65 V to 5.5 V VCC Operation • 2.7 ns tPD at VCC = 5 V (typ) • Inputs/Outputs Overvoltage Tolerant up to 5.5 V • IOFF Supports Partial Power Down Protection • Source/Sink 24 mA at 3.0 V • Avail

文件：456.83 Kbytes 页数：15 Pages

ONSEMI

安森美半导体

丝印：AH；Package：UDFN8；Dual 2-Input NOR Gate

The NL27WZ02 is a high performance dual 2−input NOR Gate operating from a 1.65 V to 5.5 V supply. Features • Designed for 1.65 V to 5.5 V VCC Operation • 2.5 ns tPD at VCC = 5 V (typ) • Inputs/Outputs Overvoltage Tolerant up to 5.5 V • IOFF Supports Partial Power Down Protection • Source/

文件：368.07 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：AH；Package：UQFN8；Dual 2-Input AND Gate

The NL27WZ08 is a high performance dual 2−input AND Gate operating from a 1.65 V to 5.5 V supply. Features • Designed for 1.65 V to 5.5 V VCC Operation • 2.5 ns tPD at VCC = 5 V (typ) • Inputs/Outputs Overvoltage Tolerant up to 5.5 V • IOFF Supports Partial Power Down Protection • Source/

文件：330.61 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：AH；Package：SMB；600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Glass Passivated Die Construction 600W Peak Pulse Power Dissipation 5.0V – 440V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time

文件：111.2 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：AH；Package：SC-74；60 V, 3 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：313.4 Kbytes 页数：17 Pages

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丝印：AH；Package：DFN2020-3；30 V, 3 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5330PA. 2. Features and benefits • Low collector-emitter

文件：707.43 Kbytes 页数：16 Pages

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丝印：AH；Package：SOD323F；1 A very low VF MEGA Schottky barrier rectifiers

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small Surface-Mounted Device (SMD) plastic packages. 1.2 Features n Forward current: IF £ 1 A n Reverse voltage: VR £

文件：658.98 Kbytes 页数：11 Pages

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丝印：AH；Package：CFP5；30 V, 2 A low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 3

文件：253.74 Kbytes 页数：12 Pages

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丝印：AH；Package：CFP5；30 V, 2 A low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 3

文件：253.87 Kbytes 页数：12 Pages

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丝印：AH；Package：SOD123W；400 W Transient Voltage Suppressor

1.1 General description 400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage protection. 1.2 Features and benefits 1.3 Applications Power supply protection Auto

文件：680.8 Kbytes 页数：12 Pages

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