100/1000 Base T Gigabit Dual Port Transformer

文件：373.03 Kbytes 页数：1 Pages

ALLIED

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitat

文件：117.85 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID = 9.4 A (VGS = 10V) ● RDS(ON)

文件：1.20837 Mbytes 页数：4 Pages

KEXIN

科信电子

20V Dual N-Channel MOSFET

文件：177.42 Kbytes 页数：4 Pages

AOSMD

万国半导体