AGR19045EF中文资料TriQuint数据手册PDF规格书

Introduction

The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.

EDGE Features

Typical EDGE performance,

1990 MHz, 26 V, IDQ = 400 mA:

— Output power (POUT): 18 W typical.

— Power gain: 14.5 dB.

— Efficiency: 35 typical.

— Spectral regrowth:

@ ±400 kHz = –62 dBc.

@ ±600 kHz = –74 dBc.

— Error vector magnitude (EVM) = 2.0.

GSM Features

Typical performance over entire GSM band:

— P1dB: 50 W typical.

— Power gain @ P1dB = 14.0 dB continuous wave (CW).

— Efficiency @ P1dB = 54 typical CW.

— Return loss: –10 dB.

Device Performance Features

High-reliability, gold-metalization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

Device can withstand 10:1 voltage standing wave

ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W CW output power.

Large signal impedance parameters available.