N-Channel Enhancement-Mode Lateral MOSFET

文件：862.59 Kbytes 页数：19 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

文件：862.59 Kbytes 页数：19 Pages

恩XP

716-960 MHz，56 W平均值，28 V Airfast® LDMOS射频功率晶体管

The AFT09S200W02NR3 and AFT09S200W02GNR3 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz. • Designed for Wide Instantaneous Bandwidth Applications\n• Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions\n• RoHS Compliant\n• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.\n;

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