N-Channel Enhancement-Mode Lateral MOSFET

文件：526.88 Kbytes 页数：13 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

文件：481.24 Kbytes 页数：19 Pages

恩XP

N-Channel Enhancement-Mode Lateral MOSFET

文件：481.24 Kbytes 页数：19 Pages

恩XP

Airfast RF Power LDMOS Transistor, 920-960 MHz, 56 W Avg., 28 V

The AFT09H310-03SR6 and AFT09H310-04GSR6 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 920 to 960 MHz. • Advanced High Performance In-Package Doherty\n• Designed for Digital Predistortion Error Correction Systems\n• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.\n;

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Airfast Broadband RF Power LDMOS Transistor, 764-941 MHz, 55 W, 12.5 V

The AFT09MP055NR1 and AFT09MP055GNR1 are designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in mobile radio equipment. • Characterized for Operation from 764 to 941 MHz\n• Integrated Input Matching Improves Broadband Performance\n• Integrated ESD Protection\n• Broadband — Full Power Across the Band (764-870 MHz)\n• 225°C Capable Plastic Package\n• Exceptional Thermal Performance\n• Extreme Ruggedness\n• High Lineari;

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764-941 MHz，55 W，12.5 V LDMOS宽带射频功率晶体管

The AFT09MP055NR1 and AFT09MP055GNR1 are designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in mobile radio equipment. • Characterized for Operation from 764 to 941 MHz\n• Integrated Input Matching Improves Broadband Performance\n• Integrated ESD Protection\n• Broadband — Full Power Across the Band (764-870 MHz)\n• 225°C Capable Plastic Package\n• Exceptional Thermal Performance\n• Extreme Ruggedness\n• High Lineari;

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