High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET

文件：996.3 Kbytes 页数：23 Pages

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High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET

文件：996.3 Kbytes 页数：23 Pages

恩XP

136-941 MHz，6.0 W，7.5 V LDMOS宽带射频功率晶体管

The AFT05MS006NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment. • Characterized for Operation from 136 to 941 MHz\n• Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Integrated ESD Protection\n• Integrated Stability Enhancements\n• Wideband — Full Power Across the Band\n• Exceptional Thermal Performance\n• Extreme Ruggedness\n• High Linear;

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