100V P-Channel Enhancement Mode MOSFET

General Description AFP2325A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface moun

文件：504.25 Kbytes 页数：6 Pages

ALFA-MOS

100V P-Channel Enhancement Mode MOSFET

General Description AFP2325A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface moun

文件：504.25 Kbytes 页数：6 Pages

ALFA-MOS

Frequency Synthesizer for RF Personal Communications

文件：409.41 Kbytes 页数：22 Pages

NSC

国半

Frequency Synthesizer for RF Personal Communications

文件：409.41 Kbytes 页数：22 Pages

NSC

国半

Silicon NPN Transistor High Voltage Switch

Features: • High Reverse Voltage: VCBO = 900V (Max) • High Speed Switching: tf = 0.7µs (Max)

文件：23.59 Kbytes 页数：2 Pages

NTE