APT5012LNR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

APT5012WVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

APT5012WVR

N-CHANNELMOSFET

N-CHANNELMOSFET POWERMOSV® 500V40A0.120Ω

AR5012L

AUTOMOTIVERECTIFIERDIODES

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Pb/RoHSFree

AWG5012C

ArbitraryWaveformGenerators

BAR5012D

50AMPJUMBODIODECELL

BR5012

GlassPassivatedSinglePhaseBridgeRectifiers

BR5012W

GlassPassivatedSinglePhaseBridgeRectifiers

BTS5012SDA

SmartHigh-SidePowerSwitchPROFET??OneChannel

CDB5012

EvaluationBoard