零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
AFE8030Octal-ChannelRFTransceiverwithFeedbackPaths 1Features •OctalRFsampling12-GSPStransmitDACs •OctalRFsampling4-GSPSreceiveADCs •DualRFsampling4-GSPSfeedbackADCs •MaximumRFsignalbandwidth: –TX/FB:800MHz. •1200MHzin4-channelmode –RX:400MHz •800MHzin4-channelmode •RFfrequencyrange:upto6GHz • | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
AFE8030Octal-ChannelRFTransceiverwithFeedbackPaths | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
AFE8030Octal-ChannelRFTransceiverwithFeedbackPaths 1Features •OctalRFsampling12-GSPStransmitDACs •OctalRFsampling4-GSPSreceiveADCs •DualRFsampling4-GSPSfeedbackADCs •MaximumRFsignalbandwidth: –TX/FB:800MHz. •1200MHzin4-channelmode –RX:400MHz •800MHzin4-channelmode •RFfrequencyrange:upto6GHz • | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
8-LineEMIFilterwithIntegratedESDProtection | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
8-LineEMIFilterwithIntegratedESDProtection | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSV PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSV PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
2X15W2.0channelanti-breakingClassDamplifier | YONGFUKANGShenzhenshi YONGFUKANG Technology co.,LTD 永福康深圳市永福康科技有限公司 | YONGFUKANG | ||
2X15W2.0channelanti-breakingClassDamplifier | YONGFUKANGShenzhenshi YONGFUKANG Technology co.,LTD 永福康深圳市永福康科技有限公司 | YONGFUKANG | ||
DCBlowerFan80x80x30mm | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | COOLCOX |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AVAGO |
2020+ |
MLP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
AVAGO/安华高 |
22+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
AVAGO |
21+ |
QFN |
8790 |
原装现货假一赔十 |
询价 | ||
AVAGO/安华高 |
21+ |
QFN |
120000 |
长期代理优势供应 |
询价 | ||
AVAGO/安华高 |
QFN |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
AVAGO |
22+ |
QFN |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
AVAGO/安华高 |
23+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
AVAGO |
21+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
AVAGO/Avago/安华高/安华高科技 |
QFN |
361 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | |||
AVAGO/安华高 |
22+ |
QFN |
25000 |
原装现货,价格优惠,假一罚十 |
询价 |
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