P-Channel 30-V (D-S) MOSFET

General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portabl

文件：149.25 Kbytes 页数：3 Pages

ANACHIP

易亨电子

P-Channel 30-V (D-S) MOSFET

General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portabl

文件：149.25 Kbytes 页数：3 Pages

ANACHIP

易亨电子

P-Channel 30-V (D-S) MOSFET

General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portabl

文件：149.25 Kbytes 页数：3 Pages

ANACHIP

易亨电子

P-Channel 30-V (D-S) MOSFET

General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portabl

文件：149.25 Kbytes 页数：3 Pages

ANACHIP

易亨电子

P-Channel 30-V (D-S) MOSFET

文件：1.00282 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

Diodes

美台半导体

P-Channel 30-V (D-S) MOSFET

General Description\nThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management\ncircuitry. Typical applications are PWM DC-DC converters, power management in portable and\ -Low rDS(on) Provides Higher Efficiency and Extends Battery Life\n-Miniature SO-8 Surface Mount Package Saves Board Space\n-High power and current handling capability\n-Extended VGS range (±25) for battery pack applications;

Diodes

美台半导体