GaAs MMIC Control FET in SOT 143 DC-2.5 GHz

Description The AF002C1-32 consists of a single GaAs switching FET that can be used in both series and shunt configurations. A positive control voltage may be used by simply adding 3 DC blocking capacitors. Features ■ Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC

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GaAs IC Control FET Series DC-2.5 GHz

Description This group of GaAs control FETs can be used in both series and shunt configurations.They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW. These features make the device ideal replacements for PIN diodes, whe

文件：43.27 Kbytes 页数：4 Pages

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GaAs IC Control FET Series 300 kHz-2.5 GHz

Description This group of GaAs control FETs can be used in both series and shunt configurations. They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW. These features make the devices ideal replacements for PIN diodes, w

文件：326.01 Kbytes 页数：6 Pages

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GaAs IC Control FET Series 300 kHz-2.5 GHz

Description This group of GaAs control FETs can be used in both series and shunt configurations. They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW. These features make the devices ideal replacements for PIN diodes, w

文件：326.01 Kbytes 页数：6 Pages

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思佳讯

GaAs IC Control FET Series 300 kHz-2.5 GHz

Description This group of GaAs control FETs can be used in both series and shunt configurations. They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW. These features make the devices ideal replacements for PIN diodes, w

文件：326.01 Kbytes 页数：6 Pages

SKYWORKS

思佳讯

GaAs IC Control FET Series DC-2.5 GHz

Description This group of GaAs control FETs can be used in both series and shunt configurations.They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW. These features make the device ideal replacements for PIN diodes, whe

文件：43.27 Kbytes 页数：4 Pages

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GaAs IC Control FET Series 300 kHz-2.5 GHz

Description This group of GaAs control FETs can be used in both series and shunt configurations. They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW. These features make the devices ideal replacements for PIN diodes, w

文件：326.01 Kbytes 页数：6 Pages

SKYWORKS

思佳讯

GaAs IC 15 dB Voltage Variable Attenuator Single Control DC-2 GHz

Description The AF002N2-32 is a single control non-reflective IC FET VVA ideal for AGC applications. Its low DC drain characteristic and size make it suitable for PCS and portable cellular markets. A positive control voltage may be used by adding 2 DC blocking capacitors (CBL) and 1 bypass capaci

文件：22.67 Kbytes 页数：2 Pages

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GaAs IC 15 dB Voltage Variable Attenuator Single Control 300 kHz-2 GHz

Description The AF002N2-32 is a single control nonreflective IC FET VVA ideal for AGC applications. Its low DC drain characteristic and size make it suitable for PCS and portable cellular markets. A positive control voltage may be used by adding two DC blocking capacitors (CBL) and one bypass cap

文件：123.38 Kbytes 页数：4 Pages

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GaAs IC 15 dB Voltage Variable Attenuator Single Control 300 kHz-2 GHz

Description The AF002N2-32 is a single control nonreflective IC FET VVA ideal for AGC applications. Its low DC drain characteristic and size make it suitable for PCS and portable cellular markets. A positive control voltage may be used by adding two DC blocking capacitors (CBL) and one bypass cap

文件：123.38 Kbytes 页数：4 Pages

SKYWORKS

思佳讯