AF002C4-39LF中文资料思佳讯数据手册PDF规格书

描述 Description

This group of GaAs control FETs can be used in both series and shunt configurations. They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW. These features make the devices ideal replacements for PIN diodes, where low DC drain is critical.

特性 Features

● Low-cost SOT-23 package

● Series or shunt configuration

● Low DC current drain

● Ideal switch building blocks

● Pin diode replacements

● High-power antenna switches

● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 250 °C per JEDEC J-STD-020