Cat 5e UTP Patch Cable

文件：45.83 Kbytes 页数：1 Pages

ASSMANNAssmann Electronics Inc.

阿斯曼电子

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 50V, 3A, RDS(ON) = 130mΩ @VGS = 10V. RDS(ON) = 200mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：500.35 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These

文件：196.45 Kbytes 页数：8 Pages

Fairchild

仙童半导体

SMD-8

BROADCOM/博通

上传：深圳市诺美思科技有限公司

8-SMD

BROADCOM/博通

上传：深圳市诺美思科技有限公司